If you are in search of dependable AM21L41-12DC Microcircuit Memory products, you can count on Rapid Mil Parts. You have taken a particular interest in part number AM21L41-12DC, a Advanced Micro Devices Inc component that is listed with the NSN 5962012669033 for identification purposes. When you are prepared to start the purchasing process for part number AM21L41-12DC, we provide online RFQ forms to fill out and submit for the means of receiving competitive quotes for your comparisons.
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Our dedication to quality is not merely a statement, and we strive to always exceed industry expectations for your benefit with the best NSN products, aerospace parts, military and defense parts, and other similar items on the market. For your convenience, part number AM21L41-12DC is listed alongside the NSN 5962-01-266-9033 and is categorized under the FSC 5962 Microcircuits Electronic.
Additionally, this NSN part is specifically produced under CAGE Code 34335, which identifies the specific Advanced Micro Devices Inc facility it traces back to. If you are interested in kicking off procurement for your needs through phone or email or simply wish to discuss our diverse services and your purchasing options, do not hesitate to connect with a staff member of ours today!
NSN | FSC | NIIN | CLS | Hazmat | DEMIL | Cancelled NSN |
---|---|---|---|---|---|---|
5962-01-266-9033 Item PartTypeName: MICROCIRCUIT,MEMORY | 5962 | 012669033 | 0 | N | B | |
CIIC | HCC | ESD | PMIC | Criticality | ENAC | |
U | B | A | 0 | |||
Part Number | ISC | RNVC | RNCC | HCC | MSDS | SADC |
4501601-1 | C | 1 | C | A |
MRC | Criteria | Characteristic |
---|---|---|
ADAQ | BODY LENGTH | 0.930 INCHES MAXIMUM |
ADAT | BODY WIDTH | 0.310 INCHES MAXIMUM |
ADAU | BODY HEIGHT | 0.160 INCHES MAXIMUM |
AEHX | MAXIMUM POWER DISSIPATION RATING | 1.2 WATTS |
AFGA | OPERATING TEMP RANGE | 0.0/70.0 DEG CELSIUS |
AFJQ | STORAGE TEMP RANGE | -65.0/150.0 DEG CELSIUS |
AGAV | END ITEM IDENTIFICATION | 5895-01-217-7657 MATRIX,SWITCHIN |
CBBL | FEATURES PROVIDED | HERMETICALLY SEALED AND STATIC OPERATION AND W/ENABLE AND 3-STATE OUTPUT |
CQSJ | INCLOSURE MATERIAL | CERAMIC |
CQSZ | INCLOSURE CONFIGURATION | DUAL-IN-LINE |
CQWX | OUTPUT LOGIC FORM | METAL OXIDE-SEMICONDUCTOR LOGIC |
CQZP | INPUT CIRCUIT PATTERN | 15 INPUT |
CWSG | TERMINAL SURFACE TREATMENT | SOLDER |
CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC | 5.0 VOLTS MAXIMUM POWER SOURCE |
CZEQ | TIME RATING PER CHACTERISTIC | 70.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME,LOW TO HIGH LEVEL OUTPUT AND 70.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME,HIGH TO LOW LEVEL OUTPUT |
CZER | MEMORY DEVICE TYPE | RAM |
CZZZ | MEMORY CAPACITY | UNKNOWN |
TTQY | TERMINAL TYPE AND QUANTITY | 18 PRINTED CIRCUIT |
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