If you are in search of dependable BAS21SLT1G Semiconductor Devices Unitized products, you can count on Rapid Mil Parts. You have taken a particular interest in part number BAS21SLT1G, a Semiconductor Components Industries component that is listed with the NSN 5961016336335 for identification purposes. When you are prepared to start the purchasing process for part number BAS21SLT1G, we provide online RFQ forms to fill out and submit for the means of receiving competitive quotes for your comparisons.
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Our dedication to quality is not merely a statement, and we strive to always exceed industry expectations for your benefit with the best NSN products, aerospace parts, military and defense parts, and other similar items on the market. For your convenience, part number BAS21SLT1G is listed alongside the NSN 5961-01-633-6335 and is categorized under the FSC 5961 Semiconductor Devices and Associated Hardware.
Additionally, this NSN part is specifically produced under CAGE Code 1MQ07, which identifies the specific Semiconductor Components Industries facility it traces back to. If you are interested in kicking off procurement for your needs through phone or email or simply wish to discuss our diverse services and your purchasing options, do not hesitate to connect with a staff member of ours today!
| NSN | FSC | NIIN | CLS | Hazmat | DEMIL | Cancelled NSN |
|---|---|---|---|---|---|---|
| 5961-01-633-6335 Item PartTypeName: SEMICONDUCTOR DEVICES,UNITIZED | 5961 | 016336335 | 0 | N | A | |
| CIIC | HCC | ESD | PMIC | Criticality | ENAC | |
| U | A | A | 0 | |||
| Part Number | ISC | RNVC | RNCC | HCC | MSDS | SADC |
| BAS21SLT1G | 5 | 2 | 3 |
| MRC | Criteria | Characteristic |
|---|---|---|
| MRC | Decoded Requirement | Clear Text Reply |
| CTQX | Current Rating Per Characteristic | 225.0 MILLIAMPERES NOMINAL FORWARD CURRENT, MAXIMUM PEAK TOTAL VALUE 1ST SEMICONDUCTOR DEVICE DIODE |
| CTRD | Power Rating Per Characteristic | 225.0 MILLIWATTS NOMINAL TOTAL DEVICE DISSIPATION 2ND SEMICONDUCTOR DEVICE DIODE |
| CTRD | Power Rating Per Characteristic | 225.0 MILLIWATTS NOMINAL TOTAL DEVICE DISSIPATION 3RD SEMICONDUCTOR DEVICE DIODE |
| CTQX | Current Rating Per Characteristic | 225.0 MILLIAMPERES NOMINAL FORWARD CURRENT, MAXIMUM PEAK TOTAL VALUE 2ND SEMICONDUCTOR DEVICE DIODE |
| CTRD | Power Rating Per Characteristic | 225.0 MILLIWATTS NOMINAL TOTAL DEVICE DISSIPATION 1ST SEMICONDUCTOR DEVICE DIODE |
| CTQX | Current Rating Per Characteristic | 225.0 MILLIAMPERES NOMINAL FORWARD CURRENT, MAXIMUM PEAK TOTAL VALUE 3RD SEMICONDUCTOR DEVICE DIODE |
| ASKA | Component Name And Quantity | 3 SEMICONDUCTOR DEVICE DIODE |
| CXCY | Part Name Assigned By Controlling Agency | DUAL SERIES HIGH VOLTAGE SWITCHING DIODE |
| TTQY | Terminal Type And Quantity | 3 BONDING PAD |
| ABHP | Overall Length | 0.114 INCHES NOMINAL |
| CTQN | Voltage Rating In Volts Per Characteristic | 250.0 NOMINAL REVERSE VOLTAGE, PEAK 1ST SEMICONDUCTOR DEVICE DIODE |
| AXGY | Mounting Method | TERMINAL |
| CTQN | Voltage Rating In Volts Per Characteristic | 250.0 NOMINAL REVERSE VOLTAGE, PEAK 3RD SEMICONDUCTOR DEVICE DIODE |
| CTQN | Voltage Rating In Volts Per Characteristic | 250.0 NOMINAL REVERSE VOLTAGE, PEAK 2ND SEMICONDUCTOR DEVICE DIODE |
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